Apparatus for supplying power supply voltage to semiconductor chip including volatile memory cell

ABSTRACT

Disclosed herein is an apparatus that includes a first semiconductor chip including a memory cell array having a volatile memory cell and an access control circuit configured to perform a refresh operation on the volatile memory cell, and a second semiconductor chip including a power generator configured to supply a first power supply voltage to the first semiconductor chip. The access control circuit is configured to activate a first enable signal during the refresh operation. The second semiconductor chip is configured to change a capability of the power generator based on the first enable signal.

BACKGROUND

Memory devices such as a DRAM are operated with a power supply voltagesupplied from a power management IC. The power management IC minimizespower consumption by changing the supply capability of the power supplyvoltage according to the current operation status of a DRAM. Forexample, during a period where a DRAM is performing a read operation ora write operation, the supply capability of the power supply voltage ofthe power management IC is set to be relatively large, and when the DRAMis in a standby mode, the supply capability of the power supply voltageof the power management IC is set to be relatively small.

However, because memory cells of a DRAM are volatile, even when the DRAMis in a standby mode, it is necessary to restore information held in thememory cells by periodically performing a refresh operation. Therefore,when the DRAM is in a standby mode, the power supply capability of thepower management IC is set as the power supply capability required forthe refresh operation.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram showing a configuration of a memory systemaccording to a first embodiment.

FIG. 2 is a timing chart for explaining an operation of a powermanagement IC.

FIG. 3 is a timing chart for explaining a relationship between a refreshperiod in a DRAM and an enhanced period in the power management IC.

FIG. 4 is a block diagram showing a configuration of a memory systemaccording to a second embodiment.

DETAILED DESCRIPTION

Various embodiments of the present invention will be explained below indetail with reference to the accompanying drawings. The followingdetailed description refers to the accompanying drawings that show, byway of illustration, specific aspects and embodiments in which thepresent invention may be practiced. These embodiments are described insufficient detail to enable those skilled in the art to practice thepresent invention. Other embodiments may be utilized, and structure,logical and electrical changes may be made without departing from thescope of the present invention. The various embodiments disclosed hereinare not necessary mutually exclusive, as some disclosed embodiments canbe combined with one or more other disclosed embodiments to form newembodiments.

A memory system shown in FIG. 1 includes a DRAM 100, a power managementIC 200 that supplies a power supply voltage to the DRAM 100, and acontroller 300 that controls the DRAM 100 and the power management IC200. The DRAM 100, the power management IC 200, and the controller 300are integrated into respectively different semiconductor chips.

The DRAM 100 includes a memory cell array 110, an access control circuit120 for accessing the memory cell array 110, and an I/O circuit 130 thatinputs and outputs read data and write data. The memory cell array 110includes a plurality of word lines WL, a plurality of bit lines BL, anda plurality of memory cells MC that are respectively arranged on anintersection of the word line WL and the bit line BL. The memory cellsMC are volatile DRAM cells and require a periodical refresh operation tohold data therein. The refresh operation is performed by the accesscontrol circuit 120. The access control circuit 120 is operated based ona command address signal CA that is supplied from the controller 300 viaa command address terminal 101. For example, when a read command and anaddress signal corresponding to the read command are included in thecommand address signal CA, the access control circuit 120 performs aread operation on the memory cell array 110. Due to this operation, readdata DQ is read from a memory cell MC indicated by the address signal.The read data DQ is supplied to the controller 300 via the I/O circuit130 and a data terminal 102. When a write command and an address signalcorresponding to the write command are included in the command addresssignal CA, the access control circuit 120 performs a write operation onthe memory cell array 110. Due to this operation, write data DQ suppliedfrom the controller 300 via the data terminal 102 and the I/O circuit130 is written in a memory cell MC indicated by the address signal.

The DRAM 100 includes a CKE terminal 103 to which a clock enable signalCKE is supplied. The clock enable signal CKE is input to the accesscontrol circuit 120. When the clock enable signal CKE is in an activestate (for example, a high level), the DRAM 100 is operated in a normaloperation mode, and when the clock enable signal CKE is in an inactivestate (for example, a low level), the DRAM 100 is operated in a standbymode. When the DRAM 100 enters a standby mode, the DRAM 100 is in a lowpower consumption state where the DRAM 100 holds data of the memory cellarray 110 without performing a read operation or a write operation.However, because the memory cells MC are volatile, even in a standbymode, it is necessary to restore information held in the memory cells MCby periodically performing a refresh operation. The refresh operation ina standby mode is performed in a predetermined cycle by using anoscillator circuit included in the access control circuit 120. During aperiod where the refresh operation is actually performed in a standbymode, an enable signal RefEN is output from the access control circuit120.

The DRAM 100 includes a power supply terminal 104 to which a powersupply voltage VDD1 is supplied, a power supply terminal 105 to which apower supply voltage VDD2 is supplied, and a power supply terminal 106to which a power supply voltage VDDQ is supplied. The power supplyvoltages VDD1 and VDD2 are supplied to the memory cell array 110 and theaccess control circuit 120, and are used as operating voltages of a worddriver and a sense amplifier included in the memory cell array 110 andof various logic circuits included in the access control circuit 120.Meanwhile, the power supply voltage VDDQ is supplied to the I/O circuit130 via a transistor 141. The I/O circuit 130 includes an output bufferthat outputs the read data DQ read from the memory cell array 110 to thedata terminal 102. The power supply voltage VDDQ is used as an operatingvoltage of an output buffer included in the memory cell array 110. Theclock enable signal CKE is supplied to the gate electrode of thetransistor 141. Due to this configuration, during a period where theclock enable signal CKE is at a high level, that is, in a normaloperation mode, the power supply voltage VDDQ supplied to the powersupply terminal 106 is properly given to the I/O circuit 130. Meanwhile,during a period where the clock enable signal CKE is at a low level,that is, in a standby mode, the transistor 141 is turned off, so that apath coupling the power supply terminal 106 and the I/O circuit 130 isblocked. When the clock enable signal CKE is at a low level, the enablesignal RefEN is supplied to the power supply terminal 106 via a transfergate 142. The transfer gate 142 has a configuration in which a P-channelMOS transistor and an N-channel MOS transistor are connected to eachother in parallel, where the clock enable signal CKE is supplied to thegate electrode of the P-channel MOS transistor, and a signal CKEf, whichis an inversion signal of the clock enable signal CKE, is supplied tothe gate electrode of the N-channel MOS transistor. Therefore, thetransistor 141 and the transfer gate 142 are exclusively turned on.

The power management IC 200 includes power generators 211, 212, and 213that generate the power supply voltages VDD1 and VDD2 and a powergenerator 220 that generates the power supply voltage VDDQ. The powergenerators 211, 212, and 213 are coupled to one another in parallel, thepower supply voltage VDD1 generated by the power generators 211, 212,and 213 is supplied to a power supply output terminal 201, and the powersupply voltage VDD2 generated by the power generators 211, 212, and 213is supplied to a power supply output terminal 202. The power supplyoutput terminal 201 is coupled to a power supply terminal 104 of theDRAM 100 via a power supply line VL1. The power supply output terminal202 is coupled to a power supply terminal 105 of the DRAM 100 via apower supply line VL2. Meanwhile, the power supply voltage VDDQgenerated by the power generator 220 is supplied to a power supplyoutput terminal 203. The power supply output terminal 203 is coupled tothe power supply terminal 106 of the DRAM 100 via a power supply lineVLQ.

The power generator 211 responds to an enable signal EN supplied from acontroller 300 via an external terminal 205 to be activated.Accordingly, when the enable signal EN is at an inactive level (forexample, a low level), the power generator 211 stops a generatingoperation of the power supply voltages VDD1 and VDD2. The powergenerator 211 has the highest current supply capability among the powergenerators 211, 212, and 213. Therefore, the power generator 211 has thelargest power consumption among the power generators 211, 212, and 213.

When setting information SET is at a high level, the power generator 212responds to the enable signal EN or the enable signal RefEN to beactivated. Accordingly, in a case where the setting information SET isat a high level, when the enable signal EN and the enable signal RefENare both at an inactive level (for example, a low level), the powergenerator 212 stops the generating operation of the power supplyvoltages VDD1 and VDD2. The power management IC 200 receives the enablesignal RefEN from the DRAM 100 via the power supply output terminal 203coupled to the power supply line VLQ. The power management IC 200includes an AND gate circuit 241 and an OR gate circuit 242. The enablesignal RefEN and an inverted enable signal EN are supplied to the ANDgate circuit 241. An output signal of the AND gate circuit 241 and theenable signal EN are supplied to the OR gate circuit 242. Further, thepower management IC 200 includes a mode selector 230. The mode selector230 holds, by using a register or a fuse circuit, the settinginformation SET for setting whether control on the power generator 212with the enable signal RefEN is validated. For example, when the controlon the power generator 212 with the enable signal RefEN is validated,setting information SET at a high level is held in the mode selector230, and when the control on the power generator 212 with the enablesignal RefEN is invalidated, setting information SET at a low level isheld in the mode selector 230. The setting information SET and an outputsignal of the OR gate circuit 242 are supplied to the AND gate circuit231. An output signal of the AND gate circuit 231 and the enable signalEN are supplied to the OR gate circuit 232. When an output signal of theOR gate circuit 232 is at a high level, the power generator 212generates the power supply voltages VDD1 and VDD2, and when the outputsignal of the OR gate circuit 232 is at a low level, the power generator212 stops the generating operation of the power supply voltages VDD1 andVDD2.

The current supply capability of the power generator 213 isrequired-minimum current supply capability for maintaining the level ofthe power supply voltages VDD1 and VDD2 during a period where the powergenerators 211 and 212 stop the generating operation of the power supplyvoltages VDD1 and VDD2.

The power generator 220 responds to the enable signal EN supplied fromthe controller 300 via the external terminal 205 to be activated.Accordingly, when the enable signal EN is at an inactive level (forexample, a low level), the power generator 220 stops a generatingoperation of the power supply voltage VDDQ. The power supply voltageVDDQ generated by the power generator 220 is supplied to the powersupply terminal 106 of the DRAM 100 via the power supply output terminal203 and the power supply line VLQ. Therefore, during a period where theenable signal EN is at a high level, that is, in a normal operationmode, the power supply voltage VDDQ is properly given to the powersupply terminal 106 via the power supply line VLQ. Meanwhile, during aperiod where the enable signal EN is at a low level, that is, in astandby mode, the output node of the power generator 220 is in ahigh-impedance state. Accordingly, the power generator 220 enters astate where it is possible to receive the enable signal RefEN from theDRAM 100.

The controller 300 is a semiconductor chip that controls operations ofthe DRAM 100 and the power management IC 200, and includes externalterminals 301 to 304. The external terminal 301 is a terminal thatoutputs the command address signal CA, and is coupled to the commandaddress terminal 101 of the DRAM 100. The external terminal 302 is aterminal that inputs and outputs data DQ, and is coupled to the dataterminal 102 of the DRAM 100. The external terminal 303 is a terminalthat outputs the clock enable signal CKE, and is coupled to the CKEterminal 103 of the DRAM 100. The external terminal 304 is a terminalthat outputs the enable signal EN, and is coupled to the externalterminal 205 of the power generator IC 200.

As shown in FIG. 2, it is permissible that the enable signal EN and theclock enable signal CKE have the same waveform. During a period wherethe clock enable signal CKE is at a high level, the DRAM 100 is operatedin a normal operation mode. In the normal operation mode, because theenable signal EN is activated at a high level, all the power generators211, 212, and 213 are in an active state. Therefore, the supplycapability of the power supply voltages VDD1 and VDD2 of the power to IC200 becomes a high level, and a sufficient current required for a readoperation and a write operation is supplied from the power management IC200 to the DRAM 100. In the normal operation mode, the power generator220 is also in an active state, and the power supply voltage VDDQ issupplied to the I/O circuit 130 of the DRAM 100. At this time, thetransfer gate 142 is turned off.

At a time t0 shown in FIG. 2, when the clock enable signal CKE isshifted from a high level to a low level, the RAM 100 is switched from anormal operation mode to a standby mode. In the standby mode, the enablesignal EN is inactivated at a low level, the power generator 211 entersan inactive state. Accordingly, the supply capability of the powersupply voltages VDD1 and VDD2 of the power management IC 200 is lowered,and thus the power consumption of the power management IC 200 isdecreased. In the standby mode, the power generator 220 also enters aninactive state. Further, because the clock enable signal CKE is at a lowlevel, the transistor 141 is turned off, and the transfer gate 142 isturned on. As a result, the power supply line VLQ changes into a pathfor transferring the enable signal RefEN. The power supply line VLQ is apower supply line for supplying the power supply voltage VDDQ for theI/O circuit 130, and is not used in the standby mode. Therefore, in thepresent embodiment, the power supply line VLQ is used as a transfer pathof the enable signal RefEN.

In the standby mode, in order to hold data in the memory cells MC, theDRAM 100 performs a self-refresh operation. The self-refresh operationis an operation for restoring data in the memory cells MC by activatingthe word lines WL included in the memory cell array 110 in apredetermined cycle. The self-refresh operation is performed by theaccess control circuit 120, and during a period where a refreshoperation is actually performed, the enable signal RefEN is output fromthe access control circuit 120. The enable signal RefEN is supplied fromthe DRAM 100 to the power management IC 200 via the power supply lineVLQ. As shown in FIG. 2, a period T1 during which the enable signalRefEN is activated in the standby mode is short and appearsperiodically.

In the standby mode, during a period where the enable signal RefEN is ata low level, the power generators 211 and 212 are in an inactive stateand only the power generator 213 is in an active state, and thus thesupply capability of the power supply voltages VDD1 and VDD2 of thepower management IC 200 becomes a low level. Accordingly, a currentrequired for operating some circuits such as an oscillator circuitoperated in the access control circuit 120 and a required minimumcurrent for compensating a leakage current are supplied from the powermanagement IC 200 to the DRAM 100.

As shown in FIG. 2, when the enable signal RefEN is activated, the powergenerator 212 temporarily enters an active state, and the supplycapability of the power supply voltages VDD1 and VDD2 of the powermanagement IC 200 is increased to a middle level. The middle level is alevel of current supply capability between a low level and a high level,and the actual current supply capability is designed based on thecurrent required for a refresh operation.

Due to this configuration, in the standby mode, during a period wherethe refresh operation is not performed, only the power generator 213 isin an active state, and during a period where the refresh operation isperformed, the power generators 212 and 213 are in an active state. In ageneral memory system, as to when a DRAM is performing a refreshoperation in a standby mode cannot be recognized by a power managementIC, and thus it is necessary to always set the supply capability of thepower supply voltages VDD1 and VDD2 at a middle level. On the otherhand, in the present embodiment, the execution timing of the refreshoperation in a standby mode is notified to the power management IC 200from the DRAM 100, and thus the power management IC 200 can set thesupply capability of the power supply voltages VDD1 and VDD2 to be amiddle level at a timing when the refresh operation is performed, andcan set the supply capability of the power supply voltages VDD1 and VDD2to be a low level during other periods. Accordingly, it is possible tofurther reduce the power consumption of the power management IC 200 inthe standby mode.

While it is permissible that the period where the enable signal RefEN isactivated matches a period where a refresh operation is actuallyperformed, as shown in FIG. 3, it is also permissible that the enablesignal RefEN is activated earlier than a timing when the refreshoperation is started by a period T2, and that the enable signal RefEN isinactivated later than a timing when the refresh operation is finishedby a period T3. Due to this configuration, the supply capability of thepower supply voltages VDD1 and VDD2 does not become insufficient duringthe refresh operation.

In the memory system shown in FIG. 1, because the power supply line VLQis used for transferring the enable signal RefEN, it is not necessary toadd any new external terminal to output the enable signal RefEN to theDRAM 100, and also not necessary to add any new external terminal toinput the enable signal RefEN to the power management IC 200.

Further, as in the memory system shown in FIG. 4, it is permissible thata signal line SL for coupling an external terminal 107 of the DRAM 100and an external terminal 204 of the power management IC 200 is providedto supply the enable signal RefEN to the power management IC 200 fromthe DRAM 100 via the signal line SL. In this case, it is not necessaryto use the transistor 141 or the transfer gate 142. The externalterminal 107 of the DRAM 100 can be a dedicated external terminal or canbe a part of an external terminal not used in a standby mode, such asany of command address terminals 101, or any of data terminals 102.

Using these embodiments introduced in FIG. 1 to 4, die size and powerconsumption of the power management IC can be smaller because bigcapacitors for voltage lines to support stable current are not requiredin these embodiments. Even in case that the power management IC includesthe big capacitors for covering two operation modes controlled by themode selector, the big capacitors can be electrically disconnected fromthe voltage lines to inhibit leak currents in the big capacitors, so thepower consumption can be suppressed.

Although this invention has been disclosed in the context of certainpreferred embodiments and examples, it will be understood by thoseskilled in the art that the inventions extend beyond the specificallydisclosed embodiments to other alternative embodiments and/or uses ofthe inventions and obvious modifications and equivalents thereof. Inaddition, other modifications which are within the scope of thisinvention will be readily apparent to those of skill in the art based onthis disclosure. It is also contemplated that various combination orsub-combination of the specific features and aspects of the embodimentsmay be made and still fall within the scope of the inventions. It shouldbe understood that various features and aspects of the disclosedembodiments can be combined with or substituted for one another in orderto form varying mode of the disclosed invention. Thus, it is intendedthat the scope of at least some of the present invention hereindisclosed should not be limited by the particular disclosed embodimentsdescribed above.

1. An apparatus comprising: a first semiconductor chip including amemory cell array having a volatile memory cell and an access controlcircuit configured to perform a refresh operation on the volatile memorycell; and a second semiconductor chip including a power generatorconfigured to supply a first power supply voltage to the firstsemiconductor chip, wherein the access control circuit is configured toactivate a first enable signal during the refresh operation, and whereinthe second semiconductor chip is configured to change a capability ofthe power generator based on the first enable signal.
 2. The apparatusof claim 1, wherein the power generator includes first and second powergenerators coupled in parallel, and wherein the second power generatoris configured to activate when the first enable signal is activated. 3.The apparatus of claim 2, wherein the first and second power generatorsare configured to activate when a second enable signal is activatedregardless of the first enable signal.
 4. The apparatus of claim 3,further comprising a third semiconductor chip configured to generate thesecond enable signal.
 5. The apparatus of claim 4, wherein the firstpower generator has greater capability than the second power generator.6. The apparatus of claim 5, wherein the power generator furtherincludes a third power generator coupled in parallel with the first andsecond power generators, wherein the third power generator is configuredto activate regardless of the first and second enable signals, andwherein the second power generator has greater capability than the thirdpower generator.
 7. The apparatus of claim 1, wherein the secondsemiconductor chip further includes a mode selector that invalidates thefirst enable signal.
 8. The apparatus of claim 4, wherein the secondsemiconductor chip further includes an additional power generatorconfigured to supply a second power supply voltage to the firstsemiconductor chip via a power supply line, and wherein the first enablesignal is transferred from the first semiconductor chip to the secondsemiconductor chip via the power supply line.
 9. The apparatus of claim8, wherein the additional power generator is configured to stopgenerating the second power supply voltage when the second enable signalis deactivated.
 10. The apparatus of claim 9, wherein the firstsemiconductor chip further includes an I/O circuit configured to outputa data read from the memory cell array to the third semiconductor ship,and wherein the I/O circuit is configured to operate on the second powersupply voltage.
 11. The apparatus of claim 10, wherein the firstsemiconductor chip further includes a first switch circuit coupledbetween the power supply line and the I/O circuit and a second switchcircuit coupled between the power supply line and the access controlcircuit, and wherein the first and second switches are configured toexclusively turn on based on a command signal issued from the thirdsemiconductor chip. 12-20. (canceled)